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vishay semiconductors tlmk/o/s/y330. document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 1 power smd led plcc-2 features ? utilizing (as) alingap technology ? available in 8 mm tape ? luminous intensity, color and forward voltage categorized per packing unit ? luminous intensity ratio per packing unit i vmax /i vmin 1.6 ? thermal resistance r = 400 k/w ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? suitable for all soldering methods according to cecc ? lead (pb)-free device ? preconditioning: a cc. to jedec level 2a 19225 e3 description the tlm.33.. series is an advanced modification of the vishay tlm.31.. series. it is designed to incorporate larger chips, therefore, capable of withstanding a 50 ma drive current. the package of the tlm.33.. is the plcc-2. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: power ? angle of half intensity: 60 applications ? traffic signals and signs ? interior and exterior lighting ? dashboard illumination ? indicator and backlighting purposes for audio, video, lcds switches, symbols, illuminated advertising etc parts table part color, luminous intensity technology tlmk3300-gs08 red, i v > 200 mcd alingap on gaas tlmk3300-gs18 red, i v > 200 mcd alingap on gaas tlmk3301-gs08 red, i v = (250 to 800) mcd alingap on gaas tlmk3301-gs18 red, i v = (250 to 800) mcd alingap on gaas tlmk3302-gs08 red, i v = (400 to 800) mcd alingap on gaas tlmk3302-gs18 red, i v = (400 to 800) mcd alingap on gaas tlmk3303-gs08 red, i v = (400 to 1250) mcd alingap on gaas tlms3300-gs08 red, i v > 160 mcd alingap on gaas tlms3301-gs08 red, i v = (160 to 400) mcd alingap on gaas tlms3302-gs08 red, i v = (250 to 800) mcd alingap on gaas
www.vishay.com 2 document number 83201 rev. 1.5, 25-sep-07 vishay semiconductors tlmk/o/s/y330. note: 1) t amb = 25 c, unless otherwise specified 2) driving led in reverse direction is suitable for short term application note: 1) t amb = 25 c, unless otherwise specified tlmo3300-gs08 soft orange, i v > 200 mcd alingap on gaas TLMO3301-GS08 soft orange, i v = (250 to 640) mcd alingap on gaas tlmo3302-gs08 soft orange, i v = (320 to 800) mcd alingap on gaas tlmo3303-gs08 soft orange, i v = (400 to 1250) mcd alingap on gaas tlmy3300-gs08 ye l l o w, i v > 200 mcd alingap on gaas tlmy3301-gs08 ye l l o w, i v = (250 to 640) mcd alingap on gaas tlmy3302-gs08 ye l l o w, i v = (320 to 800) mcd alingap on gaas tlmy3303-gs08 ye l l o w, i v = (400 to 1250) mcd alingap on gaas absolute maximum ratings 1) tlmy33.., tlmo33.. , tlmk33.., tlms33.. parameter test condition symbol value unit reverse voltage 2) v r 5v dc forward current t amb 73 c (400 k/w) i f 50 ma power dissipation t amb 73 c (400 k/w) p v 130 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) tlmk33.., red parameter test condition part symbol min typ. max unit luminous intensity i f = 50 ma tlmk3300 i v 200 500 mcd tlmk3301 i v 250 800 mcd tlmk3302 i v 400 800 mcd tlmk3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/mcd dominant wavelength i f = 50 ma d 611 617 622 nm peak wavelength i f = 50 ma p 624 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parts table part color, luminous intensity technology
document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 3 vishay semiconductors tlmk/o/s/y330. note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) tlms33.., red parameter test condition part symbol min typ. max unit luminous intensity i f = 50 ma tlms3300 i v 160 300 mcd tlms3301 i v 160 400 mcd tlms3302 i v 250 800 mcd luminous flux/luminous intensity v /i v 3mlm/mcd dominant wavelength i f = 50 ma d 626 630 638 nm peak wavelength i f = 50 ma p 641 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a optical and electrical characteristics 1) tlmo33.., soft orange parameter test condition part symbol min typ. max unit luminous intensity i f = 50 ma tlmo3300 i v 200 500 mcd tlmo3301 i v 250 640 mcd tlmo3302 i v 320 800 mcd tlmo3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/mcd dominant wavelength i f = 50 ma d 600 605 611 nm peak wavelength i f = 50 ma p 611 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a
www.vishay.com 4 document number 83201 rev. 1.5, 25-sep-07 vishay semiconductors tlmk/o/s/y330. note: 1) t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) tlmy33.., yellow parameter test condition part symbo l min typ. max unit luminous intensity i f = 50 ma tlmy3300 i v 200 450 mcd tlmy3301 i v 250 640 mcd tlmy3302 i v 320 800 mcd tlmy3303 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/mcd dominant wavelength i f = 50 ma d 583 588 594 nm peak wavelength i f = 50 ma p 590 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a forward voltage classification group forward voltage (v) min max 1 1.85 2.25 2 2.15 2.55 color classification group dominant wavelength (nm) red soft orange yellow min max min max min max 1 611 618 598 601 581 584 2 614 622 600 603 583 586 3 602 605 585 588 4 604 607 587 590 5 606 609 589 592 6 608 611 591 594 luminous intensity classification group luminous intensity (mcd) min max xa 160 250 xb 200 320 ya 250 400 yb 320 500 za 400 630 zb 500 800 0a 630 1000 0b 800 1250
document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 5 vishay semiconductors tlmk/o/s/y330. one packing unit/tape contains only one classification group of luminou s intensity, color and forward voltage. only one single classification groups is not available. the given groups are not order codes, customer specific group combinat ions require marketing agreement. no color subgrouping for super red. typical characteristics t amb = 25 c, unless otherwise specified group name on label luminous intensity group halfgroup wavelength forward voltage zb21 figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 20 40 60 8 0 100 120 140 160 1 8 0 200 0 25 50 75 100 125 167 8 3 r thja = 400k/ w t am b - am b ient temperat u re (c) p - po w er dissipation (m w ) v 0 10 20 30 40 50 60 70 8 0 90 100 10 25 50 75 100 125 167 8 4 r thja = 400 k/ w i f - for w ard c u rrent (ma) t am b - am b ient temperat u re (c) figure 3. rel. luminous intens ity vs. angular displacement figure 4. relative intensity vs. wavelength 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 540 560 5 8 0 600 620 640 - w a v elength (nm) 1600 8 i v rel - relati v e l u mino u s intensity yello w
www.vishay.com 6 document number 83201 rev. 1.5, 25-sep-07 vishay semiconductors tlmk/o/s/y330. figure 5. change of forward voltage vs. ambient temperature figure 6. relative luminous intensity vs. amb. temperature figure 7. change of dominant wavelength vs. ambient temperature - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17015 v f - change of for w ard v oltage (m v ) 10 ma 30 ma 50 ma yello w 0.0 0.5 1.0 1.5 2.0 2 .5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17016 i v rel - relati v e l u mino u s intensity yello w - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17017 - c hange of dom. w a v elength (nm) d yello w figure 8. relative luminous intensity vs. forward current figure 9. change of dominant wavelength vs. forward current figure 10. relative intensity vs. wavelength 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 1701 8 i v rel - relati v e l u mino u s intensity yello w - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 8 0 90 100 17019 - change of dom. w a v elength (nm) d i f - for w ard c u rrent (ma) yello w 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 560 5 8 0 600 620 640 660 16314 soft orange i v rel - relati v e l u mino u s itensity - w a v elength (nm)
document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 7 vishay semiconductors tlmk/o/s/y330. figure 11. change of forward voltage vs. ambient temperature figure 12. relative luminous intensity vs. amb. temperature figure 13. change of dominant wavelength vs. ambient temperature - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17020 v - c hange of for w ard v oltage ( m v ) f 10 ma 30 ma 50 ma soft orange 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17021 i v rel - relati v e l u mino u s intensity soft orange - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17022 - change of dom. w a v elength (nm) d soft orange figure 14. relative luminous intensity vs. forward current figure 15. change of dominant wavelength vs. forward current figure 16. relative intensity vs. wavelength 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 17023 i v rel - relati v e l u mino u s intensity soft orange - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 8 0 90 100 17024 - c hange of dom. w a v elength (nm) d i f - for w ard c u rrent (ma) soft orange 0.0 0.2 0.4 0.6 0. 8 1.0 1 . 2 570 590 610 630 650 670 - w a v elength (nm) 16007 i v rel - relati v e l u mino u s intensity red
www.vishay.com 8 document number 83201 rev. 1.5, 25-sep-07 vishay semiconductors tlmk/o/s/y330. figure 17. change of forward voltage vs. ambient temperature figure 18. relative luminous intensity vs. amb. temperature figure 19. change of dominant wavelength vs. ambient temperature - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17034 v - c hange of for w ard v oltage (m v ) f 10 ma 30 ma 50 ma red 0.0 0.5 1.0 1.5 2.0 2 .5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17035 i v rel - relati v e l u mino u s intensity red - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17036 - c hange of dom. w a v elength ( nm ) d red figure 20. relative luminous intensity vs. forward current figure 21. change of dominant wavelength vs. forward current figure 22. relative intensity vs. wavelength 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 17037 i v rel - relati v e l u mino u s intensity red - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 8 0 90 100 1703 8 - change of dom. w a v elength (nm) d i f - for w ard c u rrent (ma) red 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 6 8 0 690 700 17045 i - relati v el u mino u s intensity v rel red - w a v elength (nm)
document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 9 vishay semiconductors tlmk/o/s/y330. figure 23. forward current vs. forward voltage figure 24. forward current vs. forward voltage figure 25. change of forward voltage vs. ambient temperature 0 10 20 30 40 50 60 70 8 0 90 100 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f - for w ard v oltage ( v ) 17046 f i - for w ard c u rrent (ma) yello w soft orange red s u per red 0 10 20 30 40 50 60 70 8 0 90 100 1.4 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 2.4 v f - for w ard v oltage ( v ) 17047 f i - for w ard c u rrent (ma) red t am b - am b ient temperat u re (c) v f - change of for w ard v oltage (m v ) 17039 30 ma 10 ma 50 ma red - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 figure 26. relative luminous in tensity vs. amb. temperature figure 27. change of dominant wavelength vs. ambient temperature figure 28. relative luminous intensity vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b -am b ient temperat u re (c) 17040 i - relati v el u mino u s intensity v rel red - 5 - 4 - 3 - 2 - 1 0 1 2 3 - 50 - 25 0 25 50 75 100 t am b -am b ient temperat u re (c) 17041 - change of dom. w a v elength (nm) ? d red 0.01 0 1 10 1 10 100 i f - for w ard c u rrent (ma) 17042 i v rel - relati v e l u mino u s intensity s u per red
www.vishay.com 10 document number 83201 rev. 1.5, 25-sep-07 vishay semiconductors tlmk/o/s/y330. package dimensions in millimeters figure 29. change of dominant wavelength vs. forward current - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 8 0 90 100 17043 i f - for w ard c u rrent (ma) red - change of dom. w a v elength (nm) ? d figure 30. forward current vs. pulse length 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 t p - p u lse length (s) i f - for w ard c u rrent (a) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p /t = 0.005 0.05 0.5 17044 95 11314-1 mountin g pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
document number 83201 rev. 1.5, 25-sep-07 www.vishay.com 11 vishay semiconductors tlmk/o/s/y330. ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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